 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SMD Type HEXFET Power MOSFET KRFR6215 Transistors IC TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features Advanced Process Technology +0.2 9.70-0.2 175 Operating Temperature +0.1 0.80-0.1 P-Channel Fully Avalanche Rated +0.28 1.50-0.1 +0.25 2.65-0.1 Fast Switching 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.15 0.50-0.15 0.127 max +0.15 5.55-0.15 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 10V,Tc = 25 Continuous Drain Current, VGS @ 10V,Tc = 100 Pulsed Drain Current*1 Power Dissipation TC = 25 Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy*3 Avalanche Current *1 Repetitive Avalanche Energy Peak Diode Recovery dv/dt *2 Operating Junction and Storage Temperature Range Junction-to-Case Junction-to-Ambient Junction-to-Ambient VGS EAS IAR EAR dv/dt TJ,TSTG R R R JC JA JA Symbol ID ID IDM PD Rating -13 -9 -44 110 0.71 20 310 -6.6 11 5 -55 to + 175 1.4 50 110 Unit A W W/ V mJ A mJ V/ns /W /W /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 ISD -6.6A, di/dt -620A/ s, VDD V(BR)DSS,TJ 175 *3 Starting TJ = 25 , L = 14mH,RG = 25 , IAS = -6.6A. 3.80 Surface Mount +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 www.kexin.com.cn 1 SMD Type KRFR6215 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time *1 Pulse width 300 s; duty cycle 2%. Body Diode) Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss IS ISM VSD trr Qrr ton TJ = 25 , IS = -6.6A, VGS = 0V*1 TJ = 25 , IF = -6.6A di/dt = 100A/ s*1 VGS = 0V VDS = -25V f = 1.0MHz Symbol V(BR)DSS V(BR)DSS/ Transistors IC Testconditons VGS = 0V, ID =- 250 A TJ ID = -1mA,Reference to 25 VGS = -10V, ID = -6.6A*1 VGS = -10V, ID = -6.6A, TJ = 150 *1 Min -150 Typ Max Unit V -0.02 0.295 0.58 -2.0 3.6 -25 -250 100 -100 66 8.1 35 14 36 53 37 4.5 7.5 860 220 130 -13 -4.0 V/ RDS(on) VGS(th) gfs IDSS VDS = VGS, ID = -250 A VDS = -50V, ID = -6.6A*1 VDS = -150V, VGS = 0V VDS = -120V, VGS = 0V, TJ = 150 V S A IGSS VGS = 20V VGS = -20V ID = -6.6A VDS = -120V VGS = -10V,*1 VDD = -75V ID = -6.6A RG =6.8 RD =12 *1 nA nC ns nH nH pF A Body Diode) *2 -44 -1.6 160 1.2 240 1.7 V ns nC Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) *2 Repetitive rating; pulse width limited bymax 2 www.kexin.com.cn |
Price & Availability of KRFR6215
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |